PtSi Clustering In Silicon Probed by Transport Spectroscopy

TL;DR

This paper investigates PtSi silicide clustering within silicon transistors using atomistic simulations and spectroscopy, revealing quantum dot formation that impacts device behavior at nanometer scales.

Contribution

It provides new insights into silicide clustering phenomena and quantum transport signatures in PtSi/Si/PtSi transistors, combining experimental and simulation approaches.

Findings

Evidence of PtSi cluster segregation within silicon channels.

Identification of quantum transport signatures from metallic quantum dots.

Implications for nanoscale device interface control.

Abstract

Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.