Nanorippling of GaAs (001) surface near the threshold energy of sputtering at normal ion incidence
Debasree Chowdhury, Debabrata Ghose*, Safiul Alam Mollick, Biswarup, Satpati, Satya Ranjan Bhattacharyya
TL;DR
This paper demonstrates ripple formation on GaAs (001) surfaces under 30 eV Ar+ ion bombardment at normal incidence, driven by Ehrlich-Schwoebel barrier effects and modeled by a non-linear continuum equation.
Contribution
It provides experimental evidence of ripple formation driven by Ehrlich-Schwoebel barriers at normal incidence, and introduces a continuum model based on biased diffusion.
Findings
Ripple pattern follows surface symmetry
Ripple formation occurs at elevated temperatures
Model accurately describes observed patterns
Abstract
Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the symmetry of the bombarded crystal surface. The results can be described by a non-linear continuum equation based on biased diffusion of adspecies created by ion impact.
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Taxonomy
TopicsIon-surface interactions and analysis · Advanced Materials Characterization Techniques · GaN-based semiconductor devices and materials