Weak-antilocalization and Surface Dominated Transport in Topological Insulator Bi2Se2Te

TL;DR

This study investigates the phase coherence and weak antilocalization effects in Bi2Se2Te topological insulator thin films grown by pulsed laser deposition, highlighting their potential for spintronics and quantum devices.

Contribution

It demonstrates high-quality Bi2Se2Te films with notable phase coherence and weak antilocalization behavior, using an inexpensive PLD technique for potential device applications.

Findings

High phase coherence length of 58nm at 1.78K

Observation of two-dimensional weak antilocalization behavior

Films are of good quality suitable for device integration

Abstract

We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films were found to be of good quality. We carried out extensive magneto-transport studies of these films and found that they exhibit two dimensional weak antilocalization behaviour. A careful analysis revealed a relatively high phase coherence length (58nm at 1.78K) for a PLD grown film. Since PLD is an inexpensive technique, with the possibility to integrate with other materials, one can make devices which can be extremely useful for low power spintronics and topological quantum computation.