Magnetic domain-wall motion twisted by nanoscale probe-induced spin transfer
J. Wang, L. S. Xie, C. S. Wang, H. Z. Zhang, L. Shu, J. Bai, Y. S., Chai, X. Zhao, J. C. Nie, C. B. Cao, C. Z. Gu, C. M. Xiong, Y. Sun, J. Shi,, S. Salahuddin, K. Xia, C. W. Nan, J. X. Zhang

TL;DR
This paper demonstrates a low-energy method to control magnetic domain walls using a nanoscale probe-induced spin transfer torque, achieving precise manipulation at significantly reduced current densities compared to traditional techniques.
Contribution
It introduces a novel approach to manipulate magnetic domain walls with ultralow voltage and current density using a nanoscale probe, advancing low-energy spintronic device control.
Findings
Domain wall motion controlled by probe-induced spin transfer torque.
Threshold current density significantly lower (~10^4 A/cm2) than conventional methods.
Successful manipulation of magnetic domains at nanoscale with low energy input.
Abstract
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall motion manipulated by a successive injection of spin-polarized current into a magnetic nanostructure. However, an integrant high-threshold current density of 107~108 A/cm2 inhibits the integration of those nanostructures with low-energy-cost technology. In addition, a precise determination of the location of domain walls at nanoscale seems difficult in artificially manufactured nanostructures. Here we report an approach to manipulate a single magnetic domain wall with a perpendicular anisotropy in a manganite/dielectric/metal capacitor using a probe-induced spin displacement. A spin angular momentum transfer torque occurs in the strongly correlated…
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