Enhanced architectures for room-temperature reversible logic gates in graphene

TL;DR

This paper proposes novel, low-dissipation reversible logic gates using graphene's ballistic charge carriers, enabling simplified design and potential high-frequency operation at room temperature.

Contribution

It introduces enhanced architectures for reversible logic gates in graphene, utilizing tilted gating electrodes to simplify design and improve performance over traditional transistor-based methods.

Findings

Implementation of reversible gates with low dissipation

Potential for high-frequency operation at room temperature

Simplified gate architecture compared to standard approaches

Abstract

We show that reversible two- and three-input logic gates, among which we mention the universal Toffoli gate, can be implemented with three tilted gating electrodes patterned on a monolayer graphene flake. These low-dissipation gates are based on the unique properties of ballistic charge carriers in graphene, which induce the appearance of bandgaps in transmission for properly potential barriers. The enhanced architectures for reversible logic gate implementations proposed in this paper offer a remarkable design simplification in comparison to standard approaches based on field-effect transistor circuits and a potential high-frequency operation.