Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors

TL;DR

This study investigates charge transport in mono-, bi-, and trilayer MoS2 transistors at high carrier densities, revealing low resistivities and the influence of short-range scatterers on mobility.

Contribution

It provides a comprehensive analysis of high-density charge transport in layered MoS2, including gating effects, resistivity measurements, and quantum capacitance estimation.

Findings

Resistivities as low as 1 kΩ for monolayer at 10 K

Quantum capacitance estimated around 1 μF/cm^2

Short-range scatterers limit mobility at low temperatures

Abstract

Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a combination of ion gel top gate and SiO2 back gate which allows us to achieve high charge carrier (>10^13) density. We discuss the gating properties of the devices as a function of layer thickness and demonstrate resistivities of as low as 1 k{\Omega} for monolayer and 420{\Omega} for bilayer devices at 10 K. We show that from the capacitive coupling of the two gates, quantum capacitance can be roughly estimated to be on the order of 1 {\mu}F/cm^2 for all devices studied. Temperature dependence of the carrier mobility in the high density regime indicates that short-range scatterers limit charge transport at low temperatures.