Excitons in anisotropic 2D semiconducting crystals

TL;DR

This paper investigates excitonic properties in anisotropic 2D semiconductors using numerical methods, focusing on how anisotropy and substrate effects influence exciton energies and binding energies.

Contribution

It introduces a numerical approach to analyze excitons in anisotropic 2D materials considering polarizability and substrate effects, providing new insights into exciton behavior.

Findings

Exciton energies depend on interaction strength and mass anisotropy.

Calculated exciton binding energy in phosphorene varies with substrate dielectric constant.

Numerical methods effectively model anisotropic excitonic systems.

Abstract

The excitonic behavior of anisotropic two-dimensional crystals is investigated using numerical methods. We employ a screened potential arising due to the system polarizability to solve the central-potential problem using the Numerov approach. The dependence of the exciton energies on the interaction strength and mass anisotropy is demonstrated. We use our results to obtain the exciton binding energy in phosphorene as a function of the substrate dielectric constant.