Heterojunction Hybrid Devices from Vapor Phase Grown MoS$_{2}$

TL;DR

This paper presents a scalable method to fabricate vertical heterojunction photodiodes using vapor phase grown MoS₂ on silicon, demonstrating tunable photoconductivity and broad spectral response for advanced optoelectronic applications.

Contribution

It introduces a vapor phase sulfurization process for large-scale MoS₂ growth and demonstrates its integration into heterojunction devices with tunable and broad spectral response.

Findings

Large-scale MoS₂/Si heterojunction diodes exhibit notable photoconductivity.

Spectral response can be tuned by adjusting MoS₂ thickness.

Broad spectral response includes a blue-shift into the visible range.

Abstract

We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS$_{2}$ layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS$_{2}$. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering.