Coherent control of single spins in silicon carbide at room temperature

TL;DR

This paper demonstrates room-temperature coherent control of single silicon vacancy spins in silicon carbide, highlighting its potential for quantum spintronics and quantum technology applications.

Contribution

It reports the first characterization and coherent control of single defect spins in SiC at room temperature, combining mature fabrication with quantum functionalities.

Findings

Single silicon vacancies in SiC can be optically polarized at room temperature.

Coherent control of individual defect spins was achieved.

Long spin coherence times were observed under ambient conditions.

Abstract

Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fabrication techniques. Here we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence time under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.