Isolated electron spins in silicon carbide with millisecond-coherence times

TL;DR

This paper demonstrates that individual electron spins in highly purified silicon carbide can be isolated and coherently controlled, exhibiting coherence times exceeding 1 millisecond, which is promising for quantum technology applications.

Contribution

It reports the first observation of long-coherence single electron spins in silicon carbide, advancing its potential for scalable quantum devices.

Findings

Single electron spins in SiC can be isolated and coherently controlled.

Spin coherence times exceed 1 millisecond.

Potential for wafer-scale quantum technologies.

Abstract

The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are increasingly recognized as a valuable resource for quantum-information and nanoscale-sensing applications. Here, we show that individual electron spin states in highly purified monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route to wafer-scale quantum technologies.