Effect of Interlayer Spin-Flip Tunneling for Interlayer Magnetoresistance in Multilayer Massless Dirac Fermion Systems

TL;DR

This paper studies how interlayer spin-flip tunneling affects magnetoresistance in multilayer Dirac fermion systems, revealing a shift in the crossover magnetic field influenced by Zeeman energy, aligning well with experimental data.

Contribution

It introduces a theoretical model for interlayer spin-flip tunneling in multilayer Dirac systems and explains the magnetic field dependence of magnetoresistance.

Findings

Crossover magnetic field shifts due to Zeeman energy.

Interlayer spin-flip tunneling explains positive to negative magnetoresistance transition.

Model aligns with experimental observations.

Abstract

We investigate the effect of the interlayer spin-flip tunneling for the interlayer magnetoresistance under magnetic fields in alpha-(BEDT-TTF)2I3, which is a multilayer massless Dirac fermion system under pressure. The mean field of the spin-flip correlation associated with the interlayer Coulomb interaction enables the interlayer spin-flip tunneling. Assuming the non-vertical interlayer spin-flip tunneling, we calculate the interlayer magnetoresistance using the Kubo formula. The crossover magnetic field, at which the interlayer magnetoresistance changes from positive to negative is shifted by the Zeeman energy and in good agreement with the experiment.