The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

TL;DR

This study uses grazing incidence X-ray diffraction and Raman spectroscopy to analyze how the buffer layer's coupling affects the lattice parameters and strain in epitaxial graphene on SiC(0001), revealing the buffer layer's key role in strain transfer.

Contribution

It provides detailed measurements of lattice parameters of buffer, monolayer, and bilayer graphene, showing how buffer layer decoupling influences strain relaxation and layer properties.

Findings

Buffer layer's lattice parameter varies with coverage

Decoupling buffer layer relaxes strain in graphene layers

Intercalation transforms buffer layer into graphene

Abstract

Grazing incidence X-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a $6(\sqrt{3}\times\sqrt{3})$R30$^\circ$ periodicity, a monolayer graphene (MLG) on top of the BL, and a bilayer graphene (BLG). The GID analysis was complemented by Raman spectroscopy. The lattice parameter of each layer was measured with high precision by GID. The BL possesses a different lattice parameter and corrugation when it is uncovered or beneath MLG. Our results demonstrate that the interfacial BL is the main responsible for the strain in MLG. By promoting its decoupling from the substrate via intercalation, it turns into graphene, leading to a simultaneous relaxation of the MLG and formation of a quasi-free-standing BLG.