Solid argon as a possible substrate for quasi-freestanding silicene
S. Sattar, R. Hoffmann, U. Schwingenschl\"ogl

TL;DR
This paper investigates the potential of solid argon as a substrate for silicene, showing weak interaction allows quasi-freestanding silicene with a small band gap and spin-orbit effects, suggesting easy separation.
Contribution
It introduces solid argon as a novel substrate for silicene and demonstrates its weak interaction enabling quasi-freestanding silicene with specific electronic properties.
Findings
Weak interaction with solid Ar(111) substrate.
Small binding energy of -32 meV per Si atom.
Observed band gap of 11 meV and spin-orbit splitting.
Abstract
We study the structural and electronic properties of silicene on solid Ar(111) substrate using ab-initio calculations. We demonstrate that due to weak interaction quasi-freestanding silicene is realized in this system. The small binding energy of only meV per Si atom also indicates the possibility to separate silicene from the solid Ar(111) substrate. In addition, a band gap of meV and a significant splitting of the energy levels due to spin-orbit coupling are observed.
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