Photoluminescence of focused ion beam implanted Er$^{3+}$:Y$_{2}$SiO$_{5}$ crystals

TL;DR

This study investigates the photoluminescence properties of Er$^{3+}$ ions implanted into Y$_2$SiO$_5$ crystals using focused ion beam, aiming to optimize local doping techniques for quantum applications.

Contribution

It demonstrates the use of focused ion beam implantation for local doping of Er$^{3+}$ in Y$_2$SiO$_5$ and evaluates the implantation efficiency and activation dependence on fluence.

Findings

Photoluminescence indicates successful local doping.

Implantation efficiency varies with fluence.

Post-implantation annealing affects ion activation.

Abstract

Erbium doped low symmetry Y$_2$SiO$_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping density. In the present work, we deposit Er$^{3+}$-ions by the focused ion beam technique at Yttrium sites with several fluences in one sample. With a photoluminescence study of these locally doped Er$^{3+}$:Y$_2$SiO$_5$ crystals, we are able to evaluate the efficiency of the implantation process and develop it for the highest efficiency possible. We observe the dependence of the ion activation after the post-implantation annealing on the fluence value.