Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor

TL;DR

This paper develops a self-consistent numerical model to accurately simulate the charge distribution and capacitance-voltage characteristics of a gate-all-around graded nanowire MOSFET, incorporating quantum effects and device-specific parameters.

Contribution

It introduces a novel self-consistent finite element model for C-V analysis of graded nanowire transistors considering quantum effects and device grading.

Findings

C-V characteristics vary with In-composition grading.

Quantum effects significantly influence charge profiles.

Model aligns well with experimental device parameters.

Abstract

This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded In0.75Ga0.25As + In0.53Ga0.47As channel incorporating strain and atomic layer deposited Al2O3/20nm Ti gate. C-V characteristics with introduction and variation of In-composition grading and also grading in doping concentration are explored.Finite element method has been used to solve Poisson's equation and Schr\"odinger's equation self-consistently considering wave function penetration and other quantum effects to calculate gate capacitance and charge profile for different gate biases. The device parameters are taken from a recently introduced experimental device.