Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As) epitaxial layers

TL;DR

This study investigates how adding bismuth to (Ga,Mn)As layers affects their magnetic and transport properties, revealing enhanced spin-orbit coupling and magnetic effects through epitaxial growth and annealing.

Contribution

It provides new insights into the effects of Bi incorporation on the magnetic and magneto-transport properties of (Ga,Mn)As layers.

Findings

Bi addition increases the planar Hall effect magnitude

Enhanced spin-orbit coupling observed in (Ga,Mn)(Bi,As) layers

Post-growth annealing influences magnetic properties

Abstract

High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers.