Dynamic frequency dependence of bias activated negative capacitance in semiconductor diodes under high forward bias

TL;DR

This study investigates the frequency-dependent negative capacitance behavior in different semiconductor diodes under high bias, revealing distinct dynamics and competition between electronic transition rates that enhance understanding of diode physics.

Contribution

It introduces a bias-activated differential capacitance technique to analyze the mutual dynamics of electronic processes in diodes with different functionalities.

Findings

Different frequency dependence of negative capacitance in electroluminescent and non-luminescent diodes.

Identification of competition between fast and slow electronic transition rates.

Insights into diode physics under high charge injection conditions.

Abstract

We observed qualitatively dissimilar frequency dependence of negative capacitive response under high charge injection in two sets of junction diodes which are functionally different from each other i.e. electroluminescent diodes and non-luminescent Si-based diodes. Using the technique of bias-activated differential capacitance response, we investigated the mutual dynamics of different rate processes in different diodes. We explain these observations as the mutual competition of fast and slow electronic transition rates albeit differently. This study provides a better understanding of the physics of junction diodes operating under high charge carrier injection and may lead to superior device functionalities.