Realization of epitaxial ZnO layers on GaP(111) substrates by pulsed laser deposition

TL;DR

This paper demonstrates the successful epitaxial growth of ZnO layers on GaP(111) substrates using pulsed laser deposition, showing promising optical properties for optoelectronic device integration.

Contribution

It presents the first epitaxial growth of ZnO on GaP(111) substrates with detailed crystallographic orientation analysis.

Findings

Epitaxial relationship: (0001) ZnO || (111) GaP

Strong excitonic photoluminescence observed

Weak defect luminescence indicating high quality

Abstract

Epitaxy of ZnO layers on cubic GaP (111) substrates has been demonstrated using pulsed laser deposition. Out of plane and in-plane epitaxial relationship of ZnO layer with respect to GaP substrate determined using phi scans in high resolution X-ray diffraction measurements are (0001) ZnO || (111) GaP and (-1 2 -1 0) ZnO || (-1 1 0) GaP respectively. Our results of epitaxy of ZnO and its intense excitonic photoluminescence with very weak defect luminescence suggest that (111) oriented GaP can be a potential buffer layer choice for the integration of ZnO based optoelectronic devices on Si(111) substrates.