Phenomenological Modeling of Memristive Devices

TL;DR

This paper introduces a computationally efficient phenomenological model for titanium dioxide memristive devices, accurately capturing I-V behavior at low stresses, with potential applicability to various smooth resistance switching memory devices.

Contribution

The paper presents a novel, generalizable modeling methodology that accurately predicts memristive device behavior with minimal computational cost, focusing on low-stress operation.

Findings

Model accurately predicts I-V relations at small electrical stresses

Method is applicable to different types of memory devices

Model is computationally inexpensive

Abstract

We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing electrical stresses, which is often the most critical range of operation for circuit modeling. While the choice of fitting functions is motivated by the switching and conduction mechanisms of particular titanium dioxide devices, the proposed modeling methodology is general enough to be applied to different types of memory devices which feature smooth non-abrupt resistance switching.