Degenerate Resistive Switching and Ultrahigh Density Storage in Resistive Memory

TL;DR

This paper introduces a novel resistive memory approach that uses activation power as an independent, multi-level variable alongside resistance, enabling ultra-high density storage with precise electrical control and retrieval.

Contribution

It demonstrates a new multi-dimensional storage method in tantalum oxide resistive memories by independently controlling resistance and activation power states.

Findings

Activation power can be used as a separate information state.

States can be precisely written and read electrically.

Potential for ultra-high density memory storage.

Abstract

We show that, in tantalum oxide resistive memories, activation power provides a multi-level variable for information storage that can be set and read separately from the resistance. These two state variables (resistance and activation power) can be precisely controlled in two steps: (1) the possible activation power states are selected by partially reducing resistance, then (2) a subsequent partial increase in resistance specifies the resistance state and the final activation power state. We show that these states can be precisely written and read electrically, making this approach potentially amenable for ultra-high density memories. We provide a theoretical explanation for information storage and retrieval from activation power and experimentally demonstrate information storage in a third dimension related to the change in activation power with resistance.