Semi-shunt field emission in electronic devices
Victor Karpov, Diana Shvydka

TL;DR
This paper introduces semi-shunts as needle-shaped metallic protrusions that cause strong electron emission, affecting photovoltaic device performance and potentially serving both as failure precursors and beneficial elements.
Contribution
It proposes the concept of semi-shunts, analyzes their effects on photovoltaic devices, and links stress-induced growth to device failure and potential mitigation strategies.
Findings
Semi-shunts cause low open circuit voltages in solar cells.
Stress can stimulate semi-shunt growth, leading to shunting failures.
Controllable semi-shunts may mitigate back field effects in photovoltaics.
Abstract
We introduce a concept of semi-shunts representing needle shaped metallic protrusions shorter than the distance between a device electrodes. Due to the lightening rod type of field enhancement, they induce strong electron emission. We consider the corresponding signature effects in photovoltaic applications; they are: low open circuit voltages and exponentially strong random device leakiness. Comparing the proposed theory with our data for CdTe based solar cells, we conclude that stress can stimulate semi-shunts' growth making them shunting failure precursors. In the meantime, controllable semi-shunts can play a positive role mitigating the back field effects in photovoltaics.
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