Multiferroic interfaces composed of d0 perovskites oxides
Yi Yang, Chen-Sheng Lin, Jin-Feng Chen, Lei Hu, Wen-Dan Cheng

TL;DR
This paper explores how doping and ferroelectric polarization at KTaO3/PbTiO3 interfaces induce tunable ferromagnetism and magnetoelectric effects, offering new pathways for multiferroic device development.
Contribution
It demonstrates that carrier doping and polarization reversal at these interfaces can induce and control ferromagnetism, revealing a novel multiferroic mechanism beyond traditional materials.
Findings
Doped carriers induce ferromagnetism at interfaces.
Ferromagnetism can be tuned by ferroelectric polarization.
Electric field can switch magnetic states at the interface.
Abstract
We investigate the electronic, ferroelectric and magnetic properties of KTaO3/PbTiO3 interfaces by using conventional density functional theory (DFT) and advanced DFT such as hybrid functional HSE06. We show that doped holes in valence bands or electrons in conduction bands give rise to ferromagnetism at the interfaces. The ferromagnetic states are ground states for both hole-doped (p-type) and electron-doped (n-type) interfaces by comparison with their corresponding nonmagnetic and antiferromagnetic states. Carriers (holes or electrons) concentrate near the interface to screen the polarization charge and thus the concentration of carrier varies with the ferroelectric polarization. Furthermore, the interface magnetization, which is nearly proportional to the concentration of carrier, can be tuned by ferroelectric polarization reversal, leading to strong intrinsic magnetoelectric effects…
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Taxonomy
TopicsMultiferroics and related materials · Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides
