Controllable growth of 1-7 layers of graphene by chemical vapour deposition

TL;DR

This paper demonstrates precise control over the number of graphene layers grown on copper via chemical vapor deposition by adjusting process parameters, resulting in high-quality, transparent conductive films.

Contribution

It introduces a method to controllably synthesize 1-7 layer graphene films with precise layer regulation on copper surfaces.

Findings

Layer number is controlled by flow ratio, pressure, temperature, and time.

Transferred graphene films exhibit high optical transmittance.

The method produces high-quality graphene suitable for transparent conductors.

Abstract

We report that graphene films with thickness ranging from 1 to 7 layers can be controllably synthesized on the surface of polycrystalline copper by a chemical vapour deposition method. The number of layers of graphene is controlled precisely by regulating the flow ratio of CH4 and H2, the reaction pressure, the temperature and the reaction time. The synthesized graphene films were characterized by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction, X-ray diffraction and Raman spectroscopy. In addition, the graphene films transferred from copper to other substrates are found to have a good optical transmittance that makes them suitable for transparent conductive materials.