Electromagnetic Properties of Topological Crystalline Superconductor Sn0.5In0.5Te

TL;DR

This study investigates the superconducting and electromagnetic properties of In-doped SnTe, a topological crystalline superconductor, revealing its critical parameters, gap symmetry, and charge carrier characteristics through comprehensive measurements.

Contribution

It provides detailed experimental characterization of Sn0.5In0.5Te's superconducting parameters and confirms its fully gapped s-wave nature, advancing understanding of topological crystalline superconductors.

Findings

Superconducting transition at Tc = 4.5K

Fully gapped s-wave superconductivity confirmed

Hole conduction dominates charge transport

Abstract

We report on the superconducting properties of In doped SnTe which has recently been explored as a topological crystalline superconductor. Single crystals of Sn0.5In0.5Te have been synthesized by modified Bridgman method. Resistivity measurement performed in the range 1.6K to 300K shows metallic normal state with onset of superconducting transition at Tc = 4.5K. Bulk superconductivity has also been confirmed by DC magnetization, AC susceptibility and rf penetration depth measurements. The zero temperature upper critical field, lower critical field, coherence length, penetration depth are estimated to be 1.6T, 10Oe, 143.5 {\AA} and 832nm respectively. Temperature dependence of low temperature penetration depth indicates S-wave fully gapped characteristics with BCS gap meV. Hall and Seebeck coefficient measurements confirm dominance of hole conduction with possible phonon-drag effects around ~45K. Resistive transition studied under the applied magnetic field shows thermally activated flux flow behavior.