Exciton-plasmaritons in graphene-semiconductor structures

TL;DR

This paper investigates the strong coupling phenomena between plasmons in graphene and excitons in semiconductor quantum wells, revealing the formation of exciton-plasmaritons with significant Rabi splitting.

Contribution

It introduces a theoretical framework for exciton-plasmariton formation in graphene-semiconductor structures and calculates the coupling strength and Rabi splitting for various materials.

Findings

Rabi splitting can reach 50-100 meV

Strong exciton-plasmon coupling leads to mixed states

Coupling strength depends on system parameters

Abstract

We study strong coupling between plasmons in monolayer charge-doped graphene and excitons in a narrow gap semiconductor quantum well separated from graphene by a potential barrier. We show that the Coulomb interaction between excitons and plasmons result in mixed states described by a Hamiltonian similar to that for exciton-polaritons and derive the exciton-plasmon coupling constant that depends on system parameters. We calculate numerically the Rabi splitting of exciton- plasmariton dispersion branches for several semiconductor materials and find that it can reach values of up to 50 - 100 meV.