Controlling the 2DEG states evolution at a metal/Bi$_2$Se$_3$ interface

TL;DR

This study demonstrates control over 2DEG states at metal/Bi₂Se₃ interfaces by selecting specific metals and low-temperature evaporation, revealing exclusive topological surface states at Mn/Bi₂Se₃ interfaces confirmed by ARPES.

Contribution

It introduces a method to selectively control 2DEG evolution at metal/Bi₂Se₃ interfaces and identifies conditions for the exclusive presence of topological surface states.

Findings

Topological surface states exist only at Mn/Bi₂Se₃ interface.

Control of 2DEG states achieved through metal choice and low-temperature deposition.

Proposed cation intercalation model explains the observed phenomena.

Abstract

We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi$_2$Se$_3$ can be controlled by choosing an appropriate kind of metal elements and by applying a low temperature evaporation procedure. In particular, we have found that only topological surface states (TSSs) can exist at a Mn/Bi$_2$Se$_3$ interface, which would be useful for implementing an electric contact with surface current channels only. The existence of the TSSs alone at the interface was confirmed by angle-resolved photoemission spectroscopy (ARPES). Based on the ARPES and core-level x-ray photoemission spectroscopy measurements, we propose a cation intercalation model to explain our findings.