Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells
C. Edmunds, J. Shao, M. Shirazi-HD, M. J. Manfra, O. Malis

TL;DR
This paper reports on the observation of terahertz intersubband absorption in m-plane AlGaN/GaN quantum wells, highlighting the effects of well width, charge density, and impurity separation on transition energies and linewidths.
Contribution
It provides experimental evidence of THz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells and investigates many-body effects and linewidth reduction strategies.
Findings
Decreasing peak energy with increasing well width matches theory.
Observed blue-shift of up to 14 meV due to many-body effects.
Linewidth reduced by ~40% through density control and impurity separation.
Abstract
We demonstrate THz intersubband absorption (15.6-26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is therefore attributed to many-body effects. Furthermore, a ~40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.
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