Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films

TL;DR

This study investigates the electrical and magnetic transport properties of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films, revealing how their electronic behaviors vary with temperature and composition.

Contribution

It provides new insights into the temperature-dependent magnetotransport properties of these specific ferromagnetic thin films, highlighting differences due to lattice and atomic structure.

Findings

Anomalous Hall coefficient increases with Curie temperature.

R0 and AMR ratio are temperature-independent in Mn5Si3C0.8.

Germanide films show temperature-dependent R0 and AMR, with sign changes.

Abstract

The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic metal, with a linear increase of the anomalous Hall coefficient with Curie temperature. While for ferromagnetic Mn5Si3C0.8 the normal Hall coefficient R0 and the AMR ratio are independent of temperature, these parameters strongly increase with temperature for the germanide films. This difference is attributed to the different hybridization of electronic states in the materials due different lattice parameters and different atomic configurations (Ge vs. Si metalloid). The concomitant sign change of R0 and the AMR ratio with temperature observed for the germanide films is discussed in a two-current model indicating an electron-like minority-spin transport at low temperatures.