Carbon nanotube quantum dots on hexagonal boron nitride

TL;DR

This paper demonstrates the successful fabrication of carbon nanotube quantum dots on hexagonal boron nitride substrates, showing promising stability and reproducibility for future nanoelectronic device development.

Contribution

It introduces a method to grow CNTs on hBN and fabricates quantum dots, enabling more reliable and complex nanoelectronic devices on hBN substrates.

Findings

CNTs can be grown on hBN via chemical vapor deposition

Standard imaging and lithography techniques are effective on hBN-based devices

Devices exhibit stable low-temperature electronic characteristics

Abstract

We report the fabrication details and low-temperature characteristics of the first carbon nanotube (CNT) quantum dots on flakes of hexagonal boron nitride (hBN) as substrate. We demonstrate that CNTs can be grown on hBN by standard chemical vapor deposition and that standard scanning electron microscopy imaging and lithography can be employed to fabricate nanoelectronic structures when using optimized parameters. This proof of concept paves the way to more complex devices on hBN, with more predictable and reproducible characteristics and electronic stability.