XRD fitting analysis of semiconductor heterostructures [Puolijohderakenteiden r\"ontgendiffraktion sovitusanalyysi] (in Finnish)
Juha-Matti Tilli

TL;DR
This paper presents a software tool for analyzing X-ray diffraction data from semiconductor heterostructures, using fitting analysis and dynamical diffraction theory to accurately model and interpret measured data.
Contribution
A novel software implementation combining dynamical diffraction calculations with differential evolution fitting for XRD analysis of heterostructures, accessible via Java/Matlab and GNU Octave.
Findings
Software produces results similar to existing tools.
Fitting algorithm effectively analyzes measured XRD data.
Operability tested with InGaAs, GaAs, and GaAsN structures.
Abstract
Analysis of measured X-ray diffraction (XRD) data from heterostructures with fitting analysis is discussed, for which computer program was written. Lattice constant and Poisson's ratio of a multi-compound layer is calculated from Vegard's law. Layers are strained in in-plane direction causing additional strain in out-of-plane direction and may be only partially strained. For crystals, wavelength-dependent electric susceptibility is represented as Fourier series, components of which are calculated from atomic scattering factors, H\"onl anomalous dispersion correction terms and Debye-Waller factor. XRD intensity from heterostructures as a function of angle is calculated with dynamical diffraction theory using Takagi-Taupin differential equation solution in form of recursive equations. XRD measurements are analyzed by fitting a simulated XRD curve to the measured XRD curve. Inverse problem…
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Taxonomy
TopicsX-ray Diffraction in Crystallography · Advanced Materials Characterization Techniques · Crystallography and Radiation Phenomena
