Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott- and band insulators

TL;DR

This paper theoretically demonstrates that a metallic interface between a Mott- and a band-insulator can form without polar discontinuity, driven by screening length and Coulomb interactions, with potential for tunable electronic properties.

Contribution

It introduces a new mechanism for metal-insulator transition at nonpolar heterostructures, expanding understanding beyond polar discontinuity effects.

Findings

Metallic interface forms without polar discontinuity under certain screening conditions.

Transition is tunable by dielectric constant and linked to Coulomb interactions.

Enhanced Seebeck coefficient observed near the transition.

Abstract

Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott- and a band-insulator can also form in the absence of a polar discontinuity. The condition for the appearance of such a metallic state is consistent with the classical Mott criterion: the metallic state is stable if the screening length falls below the effective Bohr radius of a particle-hole pair. In this case, the metallic state bears a remarkable similarity to the one found in polar/nonpolar heterostructures. On the other hand, if the screening length approaches the size of the effective Bohr radius, particles and holes are bound to each other resulting in an overall insulating phase. We analyze this metal-insulator transition, which is tunable by the dielectric constant, in the framework of the slave-boson mean-field theory for a lattice model with both onsite and long-range Coulomb interactions. We discuss ground-state properties and transport coefficients, which we derive in the relaxation-time approximation. Interestingly, we find that the metal-insulator transition is accompanied by a strong enhancement of the Seebeck coefficient in the band-insulator region in the vicinity of the interface. The implications of our theoretical findings for various experimental systems such as nonpolar (110) interfaces are also discussed.