Imaging ultrafast carrier transport in nanoscale devices using femtosecond photocurrent microscopy

TL;DR

This paper demonstrates a method to visualize ultrafast charge carrier dynamics in nanoscale devices using femtosecond photocurrent microscopy, revealing how carrier velocities depend on gate bias and electric fields.

Contribution

It introduces a combined scanning photocurrent microscopy and pump-probe technique to directly observe ultrafast carrier transport in nanoscale semiconductor devices.

Findings

Carrier velocities increase with larger negative gate bias.

Transit times depend on device bias and electric field strength.

Method enables visualization of ultrafast charge dynamics.

Abstract

One-dimensional nanoscale devices, such as semiconductor nanowires (NWs) and single- walled carbon nanotubes (SWNTs), have been intensively investigated because of their potential application of future high-speed electronic, optoelectronic, and sensing devices. To overcome current limitations on the speed of contemporary devices, investigation of charge carrier dynamics with an ultrashort time scale is one of the primary steps necessary for developing high-speed devices. In the present study, we visualize ultrafast carrier dynamics in nanoscale devices using a combination of scanning photocurrent microscopy and time- resolved pump-probe techniques. We investigate transit times of carriers that are generated near one metallic electrode and subsequently transported toward the opposite electrode based on drift and diffusion motions. Carrier dynamics have been measured for various working conditions. In particular, the carrier velocities extracted from transit times increase for a larger negative gate bias, because of the increased field strength at the Schottky barrier.