Electrical Transport Model of Silicene as a Channel of Field Effect Transistor

TL;DR

This paper develops an analytical electrical transport model for silicene as a transistor channel, highlighting its conductance behavior, temperature effects, and agreement with numerical methods, providing insights into silicene's potential in electronic devices.

Contribution

It introduces a new analytical model for silicene's electrical transport, comparing its conductance behavior to graphene and validating with numerical simulations.

Findings

Conductance increases with gate voltage as in conventional semiconductors.

Temperature affects the minimum conductance, increasing it at higher temperatures.

Model aligns well with numerical calculations based on non-equilibrium Green's function and DFT.

Abstract

The analytical electrical transport model of the Silicene, a single layer of sp3 bonded silicon atoms in the honeycomb lattice structure as a channel in the field effect transistor configuration is presented in this paper. Although the carrier concentration of the Silicene shows similar behavior to Graphene, there are some differences in the conductance behavior. Presented model shows increment in the total carrier and the conductance with the gate voltage as expected for conventional semiconductors which affected by the temperature only in the neutrality point. The minimum conductance is increased by the temperature whereas it remains stable in the degenerate regime. Presented analytical model is in good agreement with the numerical conductance calculation based on the implementation of the non-equilibrium Greens function method coupled to the density functional theory.