Three-dimensional localization of spins in diamond using 12C implantation

TL;DR

This paper presents a method for three-dimensional localization of individual NV centers in diamond using nitrogen doping and 12C implantation, enabling scalable quantum sensing devices with preserved coherence times.

Contribution

The authors introduce a novel technique combining nitrogen doping and 12C implantation for precise 3D localization of NV centers without increasing nitrogen incorporation.

Findings

NV centers localized within (~180 nm)^3 volume

Coherence time (T2) > 300 μs maintained

Controlled NV density via implantation dose

Abstract

We demonstrate three-dimensional localization of a single nitrogen-vacancy (NV) center in diamond by combining nitrogen doping during growth with a post-growth 12C implantation technique that facilitates vacancy formation in the crystal. We show that the NV density can be controlled by the implantation dose without necessitating increase of the nitrogen incorporation. By implanting a large 12C dose through nanoscale apertures, we can localize an individual NV center within a volume of (~180 nm)**3 at a deterministic position while reproducibly preserving a coherence time (T2) > 300 {\mu}s. Our approach enables integration of NV centers into diamond nanostructures to realize scalable spin-sensing devices as well as coherent spin coupling mediated by photons and phonons.