Ballistic transport properties in pristine-doped-pristine graphene junctions

TL;DR

This paper studies how impurities affect ballistic electron transport in graphene junctions, revealing dependence on impurity concentration and energy, with conductance behavior aligning with experimental observations, especially at low temperatures.

Contribution

It provides a theoretical analysis of impurity effects on conductance in graphene junctions, highlighting the impact of impurity concentration and energy on electron transmission.

Findings

Conductance depends strongly on impurity concentration and incident energy.

At zero bias, conductance drops to zero with high impurity levels.

Results align with experimental data on doped graphene transport.

Abstract

We investigate the ballistic electron transport in a monolayer graphene with configurational averaged impurities, located between two clean graphene leads. It is shown that the electron transmission are strongly dependent on the concentration of impurities and the incident energy. In turn, the conductance computed using the Landauer formalism shows a similar behavior to those found in experimental works as a function of the applied voltage for different concentrations of impurities in the limit of low temperatures. In the limit of zero bias voltage, the conductance shows a minimum value which reduces to zero for high concentration of impurities which disentangle graphene sublattices. These results can be very helpful for exploring the tunneling mechanism of electrons through doped thermodynamically stable graphene.