Complementary memristive device based on a thin film of MoS2 monolayers

TL;DR

This study demonstrates a simple, light-controlled complementary memristive device using MoS2 monolayer films, offering potential for future memory applications with easy fabrication and spectral tunability.

Contribution

It introduces a novel memristive device based on MoS2 monolayers that is simple to fabricate and modulated by light, unlike complex oxide heterostructures.

Findings

Device exhibits hysteretic memristive behavior.

Behavior modulated by light across UV to IR spectrum.

Simple fabrication process compared to oxide heterostructures.

Abstract

In this manuscript we demonstrate experimentally that a thin film of MoS2 monolayers formed by drop-casting on a gold interdigitated electrode on Si/SiO2 behaves like a complementary memristive device, which is a key device of future crossbar memories. The hysteretic behavior of this device is modulated by light in a spectral range expanding from UV up to IR. In contrast to previous complementary memristive devices based on complicated oxides heterostructures, this device has a simple fabrication procedure and can be controlled by light, in addition to electrical signals.