Dual-polarization light emission from InAs quantum dots in a annular photonic crystal cavity

TL;DR

This paper demonstrates a dual-polarization light emitter using an annular photonic crystal cavity with InAs quantum dots, achieving high quality factors and clear emission at 1.3 micrometers, suitable for advanced optical applications.

Contribution

It introduces a novel annular photonic crystal cavity design optimized for dual-polarization light emission from InAs quantum dots, with high quality factors.

Findings

Achieved quality factors of 1.3×10^5 and 2.8×10^6 for TE and TM polarizations.

Demonstrated clear photoluminescence emission at 1.3 μm for both polarizations.

Validated the cavity design through fabrication and spectral analysis.

Abstract

The annular photonic crystals have been regarded as a satisfactory candidate to realize dual-polarization photonic device. In this letter, we focus our attention on the study of annular photonic crystal cavity to verify its application in light emission. We proposed a two-dimensional photonic crystal model with annular air units and a point-line defect to construct a cavity for the enhancement of light emission of InAs quantum dots. With the help of global optimization method, we have obtained an annular photonic crystal cavity design which can show a high in-plane quality factor of about 1.3*105 and 2.8*106 for transverse electric and transverse magnetic polarizations, respectively. Based on the Electron Beam Lithography and Reactive Ion Etching techniques, such cavity pattern was transferred into the top of InAs/GaAs active layer. The photoluminescence spectra of sample demonstrated clear light emission at around 1.3 um for both polarizations. Such dual-polarization light emitter has potential applications in optical communications, quantum information processing and other relative areas.