Giant Current-Perpendicular-to-Plane Magnetoresistance in Multilayer Graphene as Grown on Nickel

TL;DR

This paper reports a record-high negative magnetoresistance in multilayer graphene grown on nickel, demonstrating a novel effect with potential applications in magnetic sensing and data storage.

Contribution

It introduces a new giant current-perpendicular-to-plane magnetoresistance effect in CVD-grown multilayer graphene on nickel, explained by interlayer magnetoresistance theory.

Findings

Negative magnetoresistance of 10^4% observed at room temperature

Magnetoresistance correlates with Raman spectral features

Effect surpasses known materials in magnitude for similar conditions

Abstract

Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel current-perpendicular-to-plane magnetoresistance effect in multilayer graphene as grown on a catalytic nickel surface by chemical vapor deposition. A negative magnetoresistance effect of 10^4% has been observed, which persists even at room temperature. This effect is correlated with the shape of the 2D peak as well as with the occurrence of D peak in the Raman spectrum of the as-grown multilayer graphene. The observed magnetoresistance is extremely high as compared to other known materials systems for similar temperature and field range and can be qualitatively explained within the framework of "interlayer magnetoresistance" (ILMR).