Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current

TL;DR

This paper introduces the Negative Capacitance Tunnel FET, a novel device that combines ferroelectric materials with TFET technology to achieve lower subthreshold swing and higher ON current, promising improved low-power electronic devices.

Contribution

The paper proposes a new device structure integrating ferroelectric oxide in TFETs, with an analytical model demonstrating enhanced performance over conventional TFETs.

Findings

High ON current at low gate voltage

Lower subthreshold swing compared to conventional TFETs

Analytical model accurately predicts device behavior

Abstract

In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device effectively combines two different mechanisms of lowering the sub threshold swing (SS) for a transistor garnering a further lowered one compared to conventional TFET. A simple yet accurate analytical tunnel current model for the proposed device is also presented here. The developed analytical model demonstrates high ON current at low $V_{GS}$ and exhibits lower SS.