Ideal Graphene/Silicon Schottky Junction Diodes

TL;DR

This paper investigates graphene-silicon Schottky junctions, revealing that a new transport model based on Landauer formalism is necessary to accurately describe their diode characteristics, differing from traditional models.

Contribution

It introduces a novel transport model for graphene-silicon Schottky junctions, emphasizing the role of Landauer formalism over classical approaches.

Findings

Current-voltage behavior follows ideal diode characteristics.

Transport properties are governed by injection rate from graphene.

A new model is needed to describe the junctions accurately.

Abstract

The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal-silicon Schottky junctions by using graphene, an atomically thin semimetal. We show that a fundamentally new transport model is needed to describe the graphene-silicon Schottky junction. While the current-voltage behavior follows the celebrated ideal diode behavior, the details of the diode characteristics is best characterized by the Landauer transport formalism, suggesting that the injection rate from graphene ultimately determines the transport properties of this new Schottky junction.