Large-Gap Quantum Spin Hall Insulator in single layer bismuth monobromide Bi$_{4}$Br$_{4}$

TL;DR

This paper predicts that single-layer Bi4Br4 is a large-gap quantum spin Hall insulator with a tunable band gap, robust topological phase, and potential for experimental observation and applications in dissipationless spin transport.

Contribution

The study introduces a new large-gap QSH insulator, Bi4Br4, with a layered structure suitable for exfoliation and strain tuning, advancing material options for topological electronics.

Findings

Bulk band gap of ~0.18 eV in single-layer Bi4Br4

QSH phase remains stable under external strain

Material can be exfoliated into ribbons with clean edges

Abstract

Quantum spin Hall (QSH) insulators have gapless topological edge states inside the bulk band gap, which can serve as dissipationless spin current channels protected by the time-reversal symmetry. The major challenge currently is to find suitable materials for this topological state. Here, we predict a new large-gap QSH insulator with bulk direct band gap of $\sim$0.18 eV, in single-layer Bi$_{4}$Br$_{4}$, which could be exfoliated from its three-dimensional bulk material due to the weakly-bonded layered structure. The band gap of single-layer Bi$_{4}$Br$_{4}$ is tunable via strain engineering, and the QSH phase is robust against external strain. In particular, because this material consists of special one-dimensional molecular chain as its basic building block, the single layer Bi$_{4}$Br$_{4}$ could be easily torn to ribbons with clean and atomically sharp edges, which are much desired for the observation and application of topological edge states. Our work thus provides a new promising material for experimental studies and practical applications of QSH effect.