Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene
Ruixiang Fei, Alireza Faghaninia, Ryan Soklaski, Jia-An Yan, Cynthia, Lo, and Li Yang

TL;DR
This paper demonstrates that phosphorene, a 2D semiconductor, exhibits high thermoelectric efficiency at low temperatures due to its orthogonal electrical and thermal conductances, making it promising for practical energy conversion applications.
Contribution
It reveals that phosphorene's anisotropic conductances enhance thermoelectric performance, achieving high ZT values without complex engineering.
Findings
ZT reaches 2.5 along armchair direction at 500K
ZT exceeds 1 at room temperature with moderate doping
Phosphorene is mechanically flexible and environmentally friendly
Abstract
Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy and are highly desirable for the development of portable, solid state, passively-powered electronic systems. The conversion efficiencies of such devices are quantified by the dimensionless thermoelectric figure of merit (ZT), which is proportional to the ratio of a device's electrical conductance to its thermal conductance. High ZT (>2) has been achieved in materials via all-scale hierarchical architecturing. This efficiency holds at high temperatures (700K~900K) but quickly diminishes at lower temperatures. In this paper, a recently-fabricated two-dimensional (2D) semiconductor called phosphorene (monolayer black phosphorus) is assessed for its thermoelectric capabilities. First-principles and model calculations reveal that phosphorene possesses spatially-anisotropic electrical and thermal…
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