Static Non-linearity in Graphene Field Effect Transistors

TL;DR

This paper models and validates static linearity metrics of graphene FETs, providing analytical expressions to predict their linearity performance for circuit design optimization.

Contribution

It introduces closed-form expressions for key linearity distortion metrics in GFETs, validated through simulations, aiding in biasing condition selection for improved linearity.

Findings

Validated analytical models for harmonic and intermodulation distortion in GFETs

Expressions enable prediction of linearity performance during circuit design

Simulation results confirm accuracy of the proposed models

Abstract

The static linearity performance metrics of the GFET transconductor are studied and modeled. Closed expressions are proposed for second and third order harmonic distortion (HD2, HD3), second and third order intermodulation distortion ({\Delta}IM2), {\Delta}IM3), and second and third order intercept points (AIIP2, AIIP3). The expressions are validated through large-signal simulations using a GFET VerilogA analytical model and a commercial circuit simulator. The proposed expressions can be used during circuit design in order to predict the GFET biasing conditions at which linearity requirements are met.