Thermal effects and switching kinetics in silver/manganite memristive systems: Probing oxygen vacancies diffusion

TL;DR

This study explores how oxygen vacancies diffuse in LPCMO-Ag memristive interfaces, revealing temperature-dependent switching kinetics and validating a model for bipolar resistive switching in manganite-based systems.

Contribution

It provides experimental validation of a diffusion-based model for resistive switching, with precise measurements of activation energies and diffusion coefficients.

Findings

Oxygen vacancy diffusion is thermally activated.

Experimental results match numerical simulations.

Validated the diffusion-based switching model.

Abstract

We investigate the switching kinetics of oxygen vacancies (Ov) diffusion in LPCMO-Ag memristive interfaces by performing experiments on the temperature dependence of the high resistance (HR) state under thermal cycling. Experimental results are well reproduced by numerical simulations based on thermally activated Ov diffusion processes and fundamental assumptions relying on a recent model proposed to explain bipolar resistive switching in manganite- based cells. The confident values obtained for activation energies and diffusion coefficient associated to Ov dynamics, constitute a validation test for both model predictions and Ov diffusion mechanisms in memristive interfaces.