Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts

TL;DR

This study demonstrates that realistic metal electronic structures significantly influence the lower limit of contact resistivity in epitaxial metal-semiconductor contacts, challenging the ideal metal assumption and highlighting the importance of atomistic modeling.

Contribution

It introduces atomistic simulations incorporating realistic metal electronic structures to accurately estimate contact resistivity limits in metal-semiconductor interfaces.

Findings

Ideal metal assumption underestimates resistivity by at least an order of magnitude.

Valley filtering effect depends on interface chemistry.

Realistic electronic structure impacts transport modeling accuracy.

Abstract

The effect of realistic metal electronic structure on the lower limit of resistivity in [100] oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical Tight Binding (TB) calculations. Using simulation unit cells guided by the interface chemistry of epitaxial CoSi2 on [100] oriented Si observed experimentally, it is shown that the 'ideal metal' assumption fails in some situations and consequently underestimates the lower limit of contact resistivity in n-Si by at least an order of magnitude at high doping concentrations. The mismatch in transverse momentum space in the metal and the semiconductor, the so-called 'valley filtering effect', is shown to be dependent on the interface chemistry simulated. The results emphasize the need for explicit inclusion of the metal atomic and electronic structure in the atomistic modeling of transport across metal-semiconductor contacts