Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells

TL;DR

This paper reports the first observation of microwave-induced resistance oscillations in Ge/SiGe quantum wells, demonstrating MIRO as a universal phenomenon applicable to 2D hole systems and useful for probing their energy spectrum.

Contribution

First observation of MIRO in Ge/SiGe 2D hole gas, expanding the phenomenon's applicability beyond GaAs/AlGaAs systems.

Findings

MIRO observed in Ge/SiGe quantum wells

MIRO confirms universality of the phenomenon

Microwave photoresistance probes 2D hole energy spectrum

Abstract

Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.