Merging of Landau levels in a strongly-interacting two-dimensional electron system in silicon
A.A. Shashkin, V.T. Dolgopolov, J.W. Clark, V.R. Shaginyan, M.V., Zverev, V.A. Khodel

TL;DR
This paper demonstrates that in a strongly-interacting two-dimensional electron system in silicon, Landau levels merge at the chemical potential, an intrinsic property supported by experimental data.
Contribution
It reveals that Landau level merging is an inherent feature of strongly-interacting 2D electron systems in silicon, supported by experimental evidence.
Findings
Landau levels merge at the chemical potential in silicon 2D systems
Merging is an intrinsic property of strongly-interacting electrons
Experimental data supports the level merging phenomenon
Abstract
We show that the merging of the spin- and valley-split Landau levels at the chemical potential is an intrinsic property of a strongly-interacting two-dimensional electron system in silicon. Evidence for the level merging is given by available experimental data.
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