Spin Hall Magnetoimpedance

TL;DR

This paper demonstrates that the spin Hall magnetoresistance effect persists at high frequencies up to 4 GHz, enabling rapid magnetization readout in magnetic insulator/normal metal bilayers with interaction times under 40 ps.

Contribution

It introduces high-frequency magnetoimpedance measurements for the spin Hall magnetoresistance effect, revealing fast interaction times and potential for rapid magnetic sensing.

Findings

Effect persists up to 4 GHz

Interaction times are shorter than 40 ps

Enables fast magnetization readout

Abstract

The recently discovered spin Hall magnetoresistance effect electrically probes pure spin current flow across a ferrimagnetic insulator/normal metal bilayer interface. While usually the DC electrical resistance of the bilayer is measured as a function of the magnetization orientation in the magnetic insulator, we here present magnetoimpedance measurements using bias currents with frequencies up to several GHz. We find that the spin Hall magnetoresistance effect persists up to frequencies of at least 4 GHz, enabling a fast readout of the magnetization direction in magnetic insulator/normal metal bilayers. Our data furthermore show that all interaction time constants relevant for the spin Hall magnetoresistance effect are shorter than 40 ps.