Conductance matrix of multi terminal semiconductor devices with edge channels

TL;DR

This paper introduces a method to determine the conductance matrix of multi-terminal semiconductor devices with edge channels, accounting for probe resistance, within the Landauer-Büttiker formalism, with potential applications in cryptography.

Contribution

A novel method for calculating the conductance matrix of multi-terminal semiconductor structures with edge channels, considering probe resistance effects.

Findings

Method effectively incorporates probe resistance contributions.

Applicable to quantum Hall and quantum spin Hall regimes.

Potential for developing new analog cryptographic devices.

Abstract

This paper presents a method for determining the conductance matrix of multi terminal semiconductor structures with edge channels. This method appears to be applied within frameworks of the ordinary Landauer - uttiker formalism for the carrier transport analysis in the regime of both the quantum Hall Effect and the quantum spin Hall Effect. The proposed method proves to take into account principally the contribution of the probes resistance in the formation of the matrix conductance elements. Finally, the possibilities of the practical application of this method to develop new versions of analog cryptographic devices are discussed.