Multiple double-metal bias-free terahertz emitters

TL;DR

This paper presents bias-free, multiplexed terahertz emitters with 2 THz bandwidth, operating under uniform illumination, utilizing metal-semiconductor structures to generate terahertz radiation without external bias.

Contribution

It introduces a novel design of multiplexed terahertz emitters using periodic metal structures on GaAs that do not require external bias or micro-lenses.

Findings

Achieved 2 THz bandwidth in terahertz emission.

Emission primarily due to Schottky barrier-induced band-bending.

Operates effectively at room temperature.

Abstract

We demonstrate multiplexed terahertz emitters that exhibits 2 THz bandwidth that do not require an external bias. The emitters operate under uniform illumination eliminating the need for a micro-lens array and are fabricated with periodic Au and Pb structures on GaAs. Terahertz emission originates from the lateral photo-Dember effect and from the different Schottky barrier heights of the chosen metal pair. We characterize the emitters and determine that most terahertz emission at 300 K is due to band-bending due to the Schottky barrier of the metal.